The functionality of the coating would be a gas barrier, on plastic substrate.
Any help would be appreciated, thanks.
Hello
As answers to your questions:
-The boiling point of HMDS is 126 °C but since you are working under vacuum, you should heat your precursor up to 50-60 °C
-As a carrier gas, you can use pure argon (and then add your reactive gases into the chamber)
-With HMDS, unlike some sensible precursors, you do not need a glove box. You can fill it normally. Also check the precursor color (it should be the clearest possible otherwise the chemical properties change and the precursor would not be able to vaporize properly).
Regards
Loraine
Hello
As answers to your questions:
-The boiling point of HMDS is 126 °C but since you are working under vacuum, you should heat your precursor up to 50-60 °C
-As a carrier gas, you can use pure argon (and then add your reactive gases into the chamber)
-With HMDS, unlike some sensible precursors, you do not need a glove box. You can fill it normally. Also check the precursor color (it should be the clearest possible otherwise the chemical properties change and the precursor would not be able to vaporize properly).
Regards
Loraine
Hi Martin,
As mentioned by others, heating up to 50-60 C under a pressure of few mtorr to torr should given enough vapor pressure. The actual vapor pressures of HMDS is 22.9 torr at 20 C. To obtain device quality SiCN with least amount of oxygen (
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