Actually What type of hysteresis loop should be approprite for memristor such that it have maximum effeciency?? Means the width should be less or high ?? Then how we can optimize the thin film?? Plz refer some papers too.
Thank u
Dear Rody
I enclose for you a paper that covers your question.
You can track our project on the Research-gate that have more details
Good Luck
Prof. S. EL-Rabaie
Hello, Roy,
A maximum efficiency of a memristor would be achieved in IxV hysteresis with high difference in electrical current between the on- and off-states (high on/off ratio). Also, for efficiency, it would be required to provide low voltage as source for the devices. About the hysteresis shape, it can present many forms, with unipolar and bipolar behaviors.
An optimal thin film for application and maximum efficiency of the memristor would be a thin one, which can provide a maximum frequency of operation that these kind of devices usually require. A metal electrode with work function that allows better alignment with the semiconductor for better carrier injection would also be preferred.
Attached (links) you may find some papers that I recommend.
Cheers,
http://www.sciencedirect.com/science/article/pii/S0169433217307912
http://www.sciencedirect.com/science/article/pii/S0927796X14000692
http://www.nature.com/nature/journal/v453/n7191/full/nature06932.html
I would second the comment of Mr. Miguel Henrique Boratto that an I-V curve can have various shapes and the hysteresis curve with a maximum off/on (switching) ratio is the most desirable.
Furthermore, the I-V curve with a quick transition from OFF state to ON state is preferred over the one with a slow response time. Usually it should be in nano seconds.
Another parameter for measuring the efficiency of a memristor through its hysteresis curve is to calculate its power consumption, it should be least. Power consumption of a memristor can be reduced by limiting current compliance (maximum current passing through the memristor) and threshold voltage.
Increasing the value of current compliance will increase the gap between OFF and ON state i.e. the hysterisis curve or memory window will become wider however, care must be taken that what is the maximum amount of current that our device can bear before malfunctioning or going out of order.
The answer to second part of your question regarding the optimization of thin film is that the thickness of thin film should be as less as possible. The memristive effect is more prominent at nanoscale thickness that keeps on decreasing with increasing film thickness. Thickness of thin film can be controlled by controlling various parameters of film deposition technique such as speed of rotation (spin coating) and number of passes (EHDA).
Optimizing the concentration of functional material is also vital in achieving the best performance of as fabricated memory device.
Following are a few of my own recent research articles related to memristors fabricated through advanced printing technology.
When we are measuring the TiO2 sample which is prepared by the dip coating process. After getting the loop the repetation the breakdown occurs with 1-1.5 V. The sample thickness is around the 70- 80 nm. What is the problem, I m not getting it properly. Another thing is what is the normal breakdown volatge for TiO2???
As per my understanding, by breakdown you mean that your device stops reproducing its results.
These are nanoscale device and in order to increase their reproducibility and lifetime, extra care should be taken while characterizing its samples.
You should try to characterize these samples electrically while keeping them in a glove box or encapsulating your devices with atomically thin films of non-reactive materials like Al2O3.
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