A group, in which I work, participated in developingthe Polish SiC device technology and specializes in ion implantation doping and radiation effects investigation in SiC. The SiC devices are considered as better than Si because of high frequency and high temperature operation. However, reliability of production is low in comparison to Si devices. In case of silicon the technology is more advanced.
Please check the product line by Cree Inc. from North Carolina, USA. They have Schottky(MPS) diodes, p-n diodes and power MOSFETs rating 1200 V or more. Also check Japanese companies like Rohm and even Toshiba. Full SiC modules are also available from these manufacturers.