what is the procedure for annealing thin films in tube furnace? How should we vary the temperature?? N for much time should we leave the sample at the peak temperature?
Depending on the material the thin film was made of. And what you want to accomplish with it.
If you want to relieve built in stress, use 0.6-O.9 of the melting point. For instance, ion implant of silicon "healing" is between 700-900 C. Annealing GaAs is encapsulated and treated at 900-950 C.