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Questions related from Yong Kim
How to do Zn diffusion process of GaAs wafer for high power laser diode(HPLD)? In order to make a HPLD based on GaAs, we are trying to do test Zn diffusion process for p-type doping. We use the...
13 December 2023 2,701 2 View
Silicon nitride(Si3Nx) thin film stress deposited by IBAD (IAD) The peeling of silicon nitride(Si3Nx) thin film is happened when the GaAs device was heated for CoS(chip on submount) package in the...
14 December 2021 7,238 4 View
How to improve characteristic temperature(To) in InGaAsP/InP laser diodes for optical communication? We have got a value To=39K in InGaAsP/InP laser diodes. Could the To value(39K) be possible to...
08 June 2020 4,904 0 View
Dear Researchers, I was wondered that the MOCVD tools can be reused. The MOCVD tools have been used for epitaxial growth of GaN (Gallium Nitride) with the other metal organic sources, such as In,...
19 March 2020 345 7 View
I was wondering if you can do microscopic examination of things from a safe distance like 1 feet. magnification : 1000x safe distance from lens to sample: around 20~30 cm The microscopic...
25 May 2017 2,650 3 View
How the index profile of high power laser diode have changed from symmetric waveguide(WG) structure to the asymmetric WG? What is the advantage of the asymmetric waveguide structure? optical...
01 January 1970 5,767 1 View
We are struggling to have a big problem about E-beam source contamination by E-beam shutter. Some materials(for instance Ta2O5, Al2O3, Si) deposited on the e-beam shutter is very often dropped...
01 January 1970 6,701 1 View
