Robin Singla

9 Questions 11 Answers 0 Followers

Questions related from Robin Singla

Does magnetic force microscopy (MFM) give phase difference for paramagnetic materials as well?

If I do MFM paramagnetic thin film patterned on SiO2, will it give a phase difference like ferromagnetic films?

01 January 2020 1,085 2 View

Why graphene shows a peak in UV Vis spectra?

Being zero bandgap material why graphene shows a peak in UV Vis spectroscopy?

08 August 2018 2,100 3 View

How to calculate total resistance for graphene FET?

which method we should follow to calculate total resistance (Rt) for graphene FETs 1. Rt = drain-source voltage/drain current Rt = Vds/Id with constant gate voltage (Vg) and varying Vds 2....

01 January 2018 6,372 5 View

How to calculate residual carrier density in graphene FET?

How can we calculate residual carrier density (no) in Graphene FETs from ID-VG plot?

05 May 2017 2,377 5 View

Decomposition of water into OH

How we can decompose water in to Oh and oxygen?

12 December 2016 1,618 1 View

Why all publications show different C1s peak valued for graphene ?

why all publications shows different peak values for sp2 carbon, COH, C-O, C=O, COOH

09 September 2016 9,923 1 View

What is the effect of acetone on Graphene ?

During transfer of graphene from Cu foil to SiO2 we use acetone to remove PMMA from graphene surface, is there any effect of acetone on graphene's chemical or electrical properties.

03 March 2015 7,361 9 View

Why contact resistance has unit ohm-um?

If we see the TLM structure and plot of total resistance vs channel length, we can calculate contact resistance from Y-intercept. But papers shows the unit of contact resistance in ohm-um. Why is...

01 January 1970 1,036 4 View

How can we calculate residual carrier density in Graphene FETs?

How can we calculate residual carrier density (no) in Graphene FETs for back gated devices

01 January 1970 3,022 0 View