Uniformity and reliability is still an open challenge in RRAM memory devices. Researchers are trying to overcome these challenges. So many technique and parameter are adopted such as bilayer structure, interface engineering and doping etc. to improve the uniformity and reduced the forming, SET and RESET voltage of memory device. Usually when we doped some metal in oxide material they reduced the forming, SET and RESET voltage and also improved the uniformity and reliability of the device. Why some dopant can increase the forming, SET and RESET voltage, however the dopant improved the uniformity and reliability of the device.
Doping may create cation vacancies which can interact with oxygen vacancies as a result mobility is reduced.
It depends on the types of dopant for your device. Some researchers use active metal for doping (such as Ag and Pt), they would be used for the formation of filament, thus a smaller electric field is needed for the Forming process and better stability of device performance can be expected. For some other dopants, probably you can think in a similar way how these dopants are involved in the filament formation and resistive switching mechanism.
How can we study the resistive switching behavior of the RRAM? While doing the cyclic voltametry of the same do we need any analyte? Attached below is the CV of the device i manufactured using TiO2 as the functional layer, is it showing resistive switching behaviour
You can check out the basic device characteristics electrically, try make some difference in voltage sweep rate, voltage sweep range, and temperature to see anything difference. Then different device architecture may also help you understand the properties of switching mechanism.
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