When I simulate GaN Transistor, and define the interfaces, s-device simulation fails giving the following message in the log file:
"Turning on fermi and thermionic (TE) should also specify the keyword 'formula=1' in the 'thermionicemission' section of the parameter file, otherwise results can be wrong in higher carrier density cases. in the future, the corrected fermi TE model (formula=1) will become default when using fermi statistics and users are urged to switch to the corrected fermi te model as soon as possible. !"
It also gives "Newton didn't converge. step size is less than min-step" in the (.out file).
Why it fails? is it a mesh problem or the parameter file has a problem ?
I think... You have to define Formula = 1 or 2 in .par file for choosing the fermi model or thermionic model.
Try it.
Hi Bassant
1- you should specify in parameter file:
ThermionicEmission {
Formula=1
}
or Formula =2 check in sdevice Manual for your material used !
do you now how to edit the parameter file?
2- for the convergence problem :
try to use a small Minstep => 1e-15 for exemple
Good luck
Younes
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