I am calculation switching losses of C2M0025120D CREE SiC MOSFET using the Evaluation board and LTspice. Current transient time with both methods are same, but voltage transient are faster in LTspice result in switching loss in ltspice is higher than switching loss in EVB. I had added the MODEL provided by CREE and STRAY inductance calculated in hardware. what might be the reason for the fast voltage transient in LTspice?

trv(Sec) tfi(Sec) tfv(Sec) tri(Sec)

LtSpice 1.438E-08 3.95E-08 1.71E-08 4.71E-08

Experiement 2.64E-08 3.88E-08 3.72E-08 5.14E-08

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