Dear Manish, I would first like to know how you have established that the degradation is indeed due to a humid environment. In the HIT module, amorphous Si is the absorber material and is passivatived by c-Si, rendering it more stable than conventional a-Si:H. The mc-Si modules may be a higher quality absorber material and as such have a higher dependence on temperature. If both technologies are encapsulated as is the case with modules, I don’t see how humidity variations can be a cause of degradation. Unless you consider humidity to have an impact on the spectral content “perceived” by rhe modules

Dear Professor,

Thank you so much for your reply. Actually, I read some previous research articles where they mentioned the low degradation rate of HIT modules compared to m-Si modules under humid conditions. I was wondering that the reasons for this low degradation rate have not been properly discussed. However, I agree with you that the structure of HIT module is quite stable than the m-Si module because of surface passivation provided by a-Si and junction fabrication at low temperatures.

However, more study is required to establish the correct fact behind the low degradation of the HIT module.

Regards

Manish