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Aluminum-based metallization is not commonly used on silicon heterojunction (SHJ) solar cells due to several reasons:
Contact Resistance: Aluminum forms a high-resistance contact with the silicon surface due to the formation of a thin insulating oxide layer (aluminum oxide) on its surface. This oxide layer limits the electrical conductivity of the contact, leading to higher contact resistance and lower overall cell efficiency.
Diffusion Barrier: Aluminum is known to diffuse easily into silicon, which can lead to increased recombination losses at the interface between the aluminum contact and the silicon absorber layer. This diffusion can degrade the performance of the solar cell by introducing defects and reducing carrier lifetime.
Heterojunction Design: SHJ solar cells rely on a carefully designed heterojunction structure where the silicon absorber layer is in close contact with transparent conductive oxides (TCOs) like indium tin oxide (ITO) or transparent conducting oxides (TCOs) like indium tin oxide (ITO) or zinc oxide (ZnO). These TCOs provide both electrical conductivity and transparency, and their properties are better suited for SHJ cells than aluminum.
Passivation: Aluminum does not offer the same passivation benefits as other materials used in SHJ cells, like amorphous silicon or intrinsic silicon oxide. Passivation is crucial for minimizing surface recombination and enhancing cell efficiency.
Reflectivity: Aluminum has higher reflectivity for sunlight compared to some other metals, which can lead to a loss of incident photons that could have otherwise been absorbed by the solar cell's absorber layer.
Thermal Mismatch: Aluminum and silicon have different coefficients of thermal expansion. This can lead to mechanical stress and even delamination as the cell goes through temperature cycles, affecting the long-term reliability of the solar cell.
Due to these technical limitations and compatibility issues, aluminum-based metallization is generally avoided in silicon heterojunction solar cells. Instead, alternative materials and techniques are employed to ensure efficient light absorption, carrier extraction, and overall cell performance.
The choice of metal contact is based on the work function of metal and the fermi level of the silicon. So usually with p-type Si for hole extraction Al contacts are used.