Highly nonlinear bistable current-voltage (I–V) characteristics are necessary in order to realize high density resistive random access memory (ReRAM) devices ( resisitive switching device ) . Kindly explain it .
Dear Yogesh Singh ,
In order to store either logic one or logic zero in a memory cell the memory cell itself must have two stable states which means that the memory device must have Bastable states or bistable I-V curve curve.
Assuming that the memory cell has bisatble I-V curve then the the I-V curve will have S shape with two positive slope potions at the lower and the higher currents.
These two positive slope portions are connected by a negative differential line piece.
In the negative differential resistance portion the device is not stable.
So the device can be operated in the low stable current branch as logic zero and operated in the high current stable sate as logic one or vice verse.
The transfer between the two sates can be affected by a control on the device.
One of such devices which I developed to a static RAM is microthyristor.
I would like that you get more information about this new memory which is based on the S I-V curve by following the paper:Conference Paper Design and analysis of a new microthyristor based SRAM cell
The memory device has a bistable I-V curve . The I-V curve has S shape with two positive slopes at the lower and the higher currents.The two slope connect by a negative differential line piece.The device isnt stable in differential resistanc.
So the device operats in the low and high stable current
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