While simulating the effect of a heavy ion strike on a reverse biased SiC Schottky diode in Sentaurus 3D, I see totally different maximum lattice temperatures when simulating different time ranges or even by selection of different number of points to be plotted in the same time range. Everything else including the device structure mesh etc remains the same.
The three solve statements below provide three different temperature profiles -
Solve {
Poisson
Coupled(Iterations= 100 LineSearchDamping= 1e-4){ Poisson Electron }
Coupled(Iterations= 100 LineSearchDamping= 1e-4){ Poisson Electron Hole Temperature}
NewCurrentPrefix= "Tr_"
transient( InitialTime=0 Finaltime = 1e-8 increment=1.4
InitialStep=1e-9 MaxStep=1e-8 MinStep=1e-25){
coupled{ poisson electron hole Temperature}
CurrentPlot ( Time= (Range= (0 1.0e-8) Intervals= 200))
}
}
Solve {
Poisson
Coupled(Iterations= 100 LineSearchDamping= 1e-4){ Poisson Electron }
Coupled(Iterations= 100 LineSearchDamping= 1e-4){ Poisson Electron Hole Temperature}
NewCurrentPrefix= "Tr_"
transient( InitialTime=0 Finaltime = 1e-8 increment=1.4
InitialStep=1e-9 MaxStep=1e-8 MinStep=1e-25){
coupled{ poisson electron hole Temperature}
CurrentPlot ( Time= (Range= (0 1.0e-8) Intervals= 2000))
}
}
Solve {
Poisson
Coupled(Iterations= 100 LineSearchDamping= 1e-4){ Poisson Electron }
Coupled(Iterations= 100 LineSearchDamping= 1e-4){ Poisson Electron Hole Temperature}
NewCurrentPrefix= "Tr_"
transient( InitialTime=0 Finaltime = 1e-7 increment=1.4
InitialStep=1e-9 MaxStep=1e-6 MinStep=1e-25)
{
coupled{ poisson electron hole Temperature}
Plot ( Time= ( 1e-13; 5e-13; 1e-12; 5e-12; 6e-12; 1e-11; 1e-10; 1e-9; 1e-8; 1e-7) noOverwrite )
}
}
Would anybody have an idea of what could I be doing wrong ?
- Badges
- Science topic
- Similar topics
- Physical Sciences
- Condensed Matter Physics
- Solid State Physics