While making contacts for the magnetic tunnel junction (MTJ) device, the lift-off of SiO2 does not occur completely

16 July 2013 0 2K Report

We have fabricated the MTJ device. To characterize the device we are trying to make top and bottom contacts. After Ar-ion etching process, we deposited SiO2. But after this step the lift-off of SiO2 does not occur completely and hence results in huge contact resistance. What can we do to overcome this issue. Could you please share your experience?

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