In various Doping wt. %

(CdS: Sb) in the pure and doped CdS1-xSbx layers on Si substrate where x = 0, 0.2, 0.4 and 0.6 at.% Or any ratios.

Any studied system that has the highest sensitivity and quantum efficiency in the visible region of the spectrum if the response and the quantum efficiency are plotted as a function of wavelength is considered to be very excellent for use as a light detector.

Thanks @ Ammar sir for answer.

Dear Rajesh Kumar

What is the wavelength required to sense?

ZnO is is a n type conductive material with large bandgap.

It is always preferred to use low doped and even intrinsic semiconductor as photo detector. Crystalline, polycrystalline or even amorphous Si are suitable for photodetector.

Conceptually it is so that the semicondcutor begins to be sensitive to the incident photon when their energy become equal or greater than its bandgap Eg.

There are many materials which can be used to produce photodetectors including metallic, organic or perovskite materials.

Best wishes

Thanks AB Zekry sir for valuable answer

Required wavelength range is 500-700 nm (Approximate).

Kumar, Manjeet, Vishwa Bhatt, A. C. Abhyankar, Joondong Kim, Akshay Kumar, and Ju-Hyung Yun. "Modulation of structural properties of Sn doped ZnO for UV photoconductors." Sensors and Actuators A: Physical 270 (2018): 118-126.

Thanks Azeez B sir for sharing of important paper

For 500-700 nm - Si, GaAs are suitable