Which SDevice Models to be used to get high Ion/Ioff ratio for 20 nm Si homojuction TunnelFET (both N&P type devices)?

05 May 2016 1 5K Report

I am getting Ion as 1 nA and Ioff as 1 fA. How to improve Ion ?

You can use Carrier Quantization with Density Gradient Model. It is available as "Quantum_des.cmd" in TCAD Sentaurus Tutorial. I am also providing that as attachment. Do necessary changes if required [value of Vdd is given 1.1 V]. The basic Carrier Transport Model is Drift-Diffusion Transport. Thermodynamic Transport is improvement on that. Hydrodynamic Transport is more. Carrier Quantization with Density Gradient Model is more suitable. The details about those are given in the link http://nadin.miem.edu.ru/Sentaurus_Training_2014/sd/sd_2.html Have a look.

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