Hello, researchers!
I need to get in practice the exact values of the surface resistance values and depth of the p-n junction for the doped impurity for MEMS pressure sensor. This task was decided to simulate the software TCAD (G-2012.06). A number of different types of doped regions were compared with experimental samples (silicon n-doped phosphorus Nn = 2.5e15 cm-3). An example of doping of the p-region boron with RS = 200 ohm/sq and xj = 1.62 um is given. Below is given text file with syntax of writing the process for certain parameters of decomposition grid and impurity distribution laws. This area has a good match for modeling with respect to experiment.
Do you think that these parameters are sufficient or too high to accurately reproduce the experiment? This question arose, because with further modeling of more complex structures of bipolar transistors, the calculation process takes a lot of time. The computer's capabilities, unfortunately, are limited.
Thank you!
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