For ZnO and other oxides Co have been tried by the maximum no. of researchers, while Mn is preferred mostly for the III-V semiconductor like GaAs, InAs etc. Please, provide advantages as well as disadvantages.
There is a lot of bibliography related to the subject of DMS, my opinion is in base of the few (respecto of the many) articles I have read: there is no agreement wich TM is better in doping ZnO or anyother semiconductor for producing RT ferromagnetism. It depends very much on the method of preparation. Doing thin films seems to be a good way of obtaining RT ferromagnetism.
I recommend to read the article:
S.A.Chambers, Surf. Sci. Rep 61, 345 (2006). Although it is a bit "old" this article opened my eyes that DMS is still an open field, from the experimental and the theoretical point of view.
Dear Sergio,
I agree with you. I have read a lot of articles on this related field and even I have not found any special point view reported on the importance of any particular TM. But still I think when one is working on a particular type of semiconductor and further in case I stick to a particular preparation method to produce a quality RT FM material, then choice of TM should have some effect. As there ionic radii are different as well as they have different no of incomplete d shell electrons so they should have different effect on the substitution or doping as well as on the kind FM interaction involved. Yet as I have mentioned earlier, I think people are preferring Co and Mn mostly. I have not proper idea about what might be the possible advantage in this purpose. So if anyone can shed some light in this issue, please pass on your comments.
Thanks
Bappaditya
If I had to choose between Co and Mn to dope ZnO, I would choose Mn because of what I have read in the mentioned article.
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