For p-type doping of ZnO, several studies have proposed co-doping methods using nitrogen and group III elements, such as Ga and Al, as dopants. In addition, sputtered p-type ZnO thin films with high hole concentration using phosphorus as dopant were reported by Kim et al ("Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant", Appl. Phys. Lett. 83, 63 (2003)).

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Nevertheless, is very hard to achieve p-type conductivity in ZnO and often the observed properties can be ascribed to extrinsic effect or decay over time. Maybe other intrinsic p-type oxides, like CuO or ZnCo2O4 do the job better?! See also Phys. Rev. B 84 , 205207 (2011)