How to find which mechanism is suitable to explain ferromagnetism for a specific material (especially non magnetic doped semiconductors)? Is there any recently published reference that includes all models that are successfully explains ferromagnetism in such semiconductors due to different defects?
See the article:
http://www.astro.uu.se/visitors/CDP/pdf/Percol.pdf
This article is for the dilute magnetic semiconductors doped with magnetic atoms. The reports on high ferromagnetism in non magnetic doped semiconductors are often not reproducible and are therefore not very reliable.
You can also look at:
http://terpconnect.umd.edu/~galitski/pubs/pub9.pdf
Here percolation mechanism has been used.
Also please read the review article of T. Dietl, Nature Mat. 9, 967 (2010).
About the subject d^0 ferromagnetism or as you put it "nonmagnetic doped semiconductor" much less is known. There a lot of work on ZnO and its doping with non-magnetic materials. In many cases the reported ferromagnetism is just because sample impurities not characterized properly. Still there exist quite a bit of literature on this subject. The hole-induced d^0 ferromagnetism is considered to be results of either spontaneous formation of intrinsic cation vacancies or extrinsic acceptor doping. There have been some calculations to support this idea. You can look to these publications:
1. J.M.D. Coey, Solid State Sciences 7, 660 (2005).
2. S. Ghosh et al., J. Appl. Phys. 109, 123927 (2011).
3. H.-B. Wang et al., Semicond. Sci. Technol. 28, 035017 (2013).
and the references therein.
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