Dear Mr. M. Saquib,

There are a lot of examples for 'large lattice mismatch'. But, can you explain in which context you are asking ?

A little bit more details ?

Thanks.

Anjan

The most useful one in the future solar energy applications (controlled quantum dot formation over the silicon sheet with adjustable surface to volume ratio to increase the efficiency of solar energy conversion) is Si/Si1-xGex bilayer where the mismatch at the interface can be controlled by varying the Ge doping level in thin Si1-xGex epitaxial layer.

Here the amount of miss match strain at the coherent interface in turns controls the morphology of the surface by creating quantum dots pattern which are connected by very thin wetting layer (fraction of nm) that may be used to collect the conduction electrons generated by solar conversion. (See our three published paper in RG)

Note: Lattice parameters: aSi =5.40 A, aGe =5.6575 A

Miss match strain = (aSi - aGe)/aGe =- 0.046 Compressive Strain on the Ge film side and Tensin on Silicon substrate.

I want to deposit Mono-layer (ML) of a metal on the highly lattice mismatch material, so that I can study the effect of this lattice mismatch on the deposited ML for fuel cell application.

Thanks for all for their kind reply

Dear Mohammed

I think, you can solve this problem about mismatch by using a buffer layer between them (between ML and highly mismatch material).

With my best wishes