Anjan Bhukta

6 Questions 21 Answers 0 Followers

Questions related from Anjan Bhukta

How to do grazing incidence X-ray diffraction (GIXRD) measurements?

Presently, I have been focused to study the crystallographic aspects of ~ 50 nm Gold thin film/ Si(001) substrate. As the thickness of the grown thin film is very small, during out of plane...

01 January 2018 7,357 6 View

Why etch pits are formed for direct current (DC) heating of Ge(001) ?

I was using direct current (DC) heating method for cleaning of native Germanium Oxide (GeOx) layer from the top of the Ge(001) substrate. For doing this, I had kept the Ge(001) substrate at 400...

11 November 2017 7,023 3 View

Why RHEED intensity oscillation is not observed for Ge/Si(111) growth ?

I was carrying out the in-situ RHEED intensity oscillation measurements during growth of Ge on reconstructed Si(111) substrate inside the MBE chamber. Substrate temperature was maintained at ~ 300...

10 October 2017 4,899 3 View

Is the direct current (DC) heating method suitable for preparation of reconstructed Ge(hkl) substrates ?

For preparation of reconstructed Si(hkl) substrates, we generally employ direct current (DC) heating method in ultra-high vacuum (UHV) condition. In this case, initially we degas the Si(hkl)...

10 October 2017 1,799 5 View

What is the definition of 'interface energy'?

Hi, We grow thin film material A on top the substrate with other material B. In some situations, grown material is the same as the material of the substrate. Briefly, for epitaxial growth ,...

01 January 1970 5,822 6 View

Is it possible to use a single PBN crucible for evaporation of two different metals?

Hi.. I have been using Pyrolytic Boron nitride (PBN) crucible for evaporation of Gold (Au) thin film in molecular beam epitaxy (MBE) method, under ultra-high vacuum (UHV) condition. Further, I...

01 January 1970 5,276 4 View