6 Questions 21 Answers 0 Followers
Questions related from Anjan Bhukta
Presently, I have been focused to study the crystallographic aspects of ~ 50 nm Gold thin film/ Si(001) substrate. As the thickness of the grown thin film is very small, during out of plane...
01 January 2018 7,372 6 View
I was using direct current (DC) heating method for cleaning of native Germanium Oxide (GeOx) layer from the top of the Ge(001) substrate. For doing this, I had kept the Ge(001) substrate at 400...
11 November 2017 7,034 3 View
I was carrying out the in-situ RHEED intensity oscillation measurements during growth of Ge on reconstructed Si(111) substrate inside the MBE chamber. Substrate temperature was maintained at ~ 300...
10 October 2017 4,913 3 View
For preparation of reconstructed Si(hkl) substrates, we generally employ direct current (DC) heating method in ultra-high vacuum (UHV) condition. In this case, initially we degas the Si(hkl)...
10 October 2017 1,812 5 View
Hi, We grow thin film material A on top the substrate with other material B. In some situations, grown material is the same as the material of the substrate. Briefly, for epitaxial growth ,...
01 January 1970 5,837 6 View
Hi.. I have been using Pyrolytic Boron nitride (PBN) crucible for evaporation of Gold (Au) thin film in molecular beam epitaxy (MBE) method, under ultra-high vacuum (UHV) condition. Further, I...
01 January 1970 5,291 4 View