There are many methods for cleaning substrate materials. One method that many people use is to place the wafer in acetone and use ultrasonication for at least 15 minutes. Then, when the film is removed from the acetone, it should be IMMEDIATELY rinsed with ethanol and/or methanol and dried with a dry N2 gun, if possible. Compressed air can also be used for drying, but I think the N2 gun is better. When using this method, you must watch for residue left on the surface by the solvents - this can be an issue.

If you are using spin-coating, I would recommend "spin-cleaning." In this method, a few drops of a strong solvent (such as 2-methoxyethanol) are dropped onto the wafer using a syringe, and then the wafer is spun to remove the excess solvent and dried on a hot plate to remove any remaining organics. I like this method; however, make sure you are doing this in a fume hood as stronger solvents (like 2-methoxyethanol) are quite toxic.

There are many other methods out there, and the best one for you will depend on your deposition technique, materials, applications, etc.

Good luck!

Hi,

Thank you for the response. Can I know the conditions like spin speed and time used to clean the platinized silicon wafer by spin coating the solvent on it? Also the temperature of the hot plate and time used to heat the wafer after spinning?

One easy method is to leave in in hot (80+ degrees C) acetone for 10-15 mins and then hot IPA for another 5 and dry with N2. If you really need it well cleaned, you can also add an oxygen plasma step for the full wafer when just removing it from the package and then do acetone/IPA wash for the smaller parts of the wafer that you scribe

Thanks Omer

No problem, hope it helps :)