In my current sputtering machine target- sample distance is fixed and not movable. I use 50 sccm Ar gas flow and tried between 20 - 50 mtorr working pressure. The base pressure was 3 x 10-7 torr. But I couldn't find smaller rms conditions below 1 nm. It is always above 2 nm? I would like to have Ge film (10 nm) with rms roughness below 1 nm.

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