I am trying to simulate the thermal resistance of an AlGaN/GaN based laser. Mainly, I want to see the temperature profile of the assymetric design of the paper in the attachment (Arafin et al 2019). The device consist of three quantum wells each having 20 nm thickness. Pumping 1.5 W of electrical power (10e16 W/m3), I see there is a temperature rise of around 14K. So the thermal resistance was found to be 9 K/W. Can anyone tell me what is the typical thermal resistance of this kind of devices? Thanks!
Hi Riazul,
The conductivity of GaN alloys is strongly dependent on the composition. Some good models can be found here: http://www.iue.tuwien.ac.at/phd/vitanov/node55.html
A thermal resistance of 9K/W sounds about right for the structure you have shown. I would try to model the full thickness of the substrate too; if you want to avoid the increase in mesh then make it thin but decrease the conductivity accordingly.
If you plan to compare to measurements or estimate performance in a system then remember the submount and package will add a significant amount of thermal resistance too.
Alex
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