Yaser Khorrami sir

your explination is good , but is there any importance of dielectric constant of that intrinsic layer that we used.

Thank you Sir so much for your valuable answer!

Here is a relationship among dielectric constant, length of intrinsic layer and response speed (one of FOM) of a photodetector. The overall response time depends on both the rise and decay times. Rise time = ((td)2+(tr)2+(RC)2)1/2, where td is the diffusion time, tr is the transit time; (drift time) = l2/μVds, where l is channel length, μ is the carrier mobility and Vds is the applied bias; RC = (Load resistance x Junction capacitance); capacitance C = εA/L, where L is the depletion length and ε is the dielectric constant (of the intrinsic layer). The diffusion time td is related to the time taken to collect the photogenerated carriers outside the n-p depletion region, which can be above several microseconds. Whereas the transit time is depending on the time taken by the photogenerated carriers to travel the depletion region under the built-in electric field in the n-p depletion region. You may check our resent work in this:Article Enhanced Quantum Efficiency in Vertical Mixed-thickness n-Re...

Thank you sir so much

Following

Good Contribution Dear Asif Rasool

Best answer Dear Yaser Khorrami