As per the Microchem data sheet "for applications where imaged resist is to be left as part of the final device, a hard bake can be incorporated into the process if the final device or part is to be subjected to thermal processing during regular operation. A hard bake of 10oC higher than the maximum expected device operating temperature is recommended. A bake temperature in the range of 150oC to 250oC and for a time between 5 and 30 minutes is typically used."
So my query is regarding the right procedure for SU-8 hard bake. Can the imaged resist be directly placed on a hot plate at 250oC for hard bake or starting from room temperature the temperature is to be slowly increased in steps to 250.