WS2 has a special property that in bulk form it is an indirect band gap semiconductor where as if we consider monolayer or a few layer then it is direct band gap semiconductor.
The room temperature PL of monolayer is because of this direct band gap transition. but experiments shows that The edges of WS2 monolayers exhibit PL signals with extraordinary intensity than the central and internal atoms.Why?
I had gone through this paper; in this paper it is reported that the edges of WS2 monolayers exhibit PL signals with extraordinary intensity than the central and internal atoms.but there is no clear information about the actual reason.
it may be due to presence of quenches present inside the material. on the surface the amount of quenchers will be less and hence the PL intensity may be more than the interior.
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