CH=CH bending

Dear colleague! ... a higher resolution would be helpful. ... what temperature? ... what dopant? boron? ....perhaps Si-O-B .... what growth regime? ... perhaps vacancy rich? ... V-0x ...? Wkr, M. Herms.

trans = C–H out-of-plane bending

Thank you Ahmed Qasim, Martin Herms and Ali Abdulkhaleq Alwahib!

I have just added CSV spectra, resolution is 4 cm-1.

I doubt with regard to CH=CH or trans =C–H. Is it possible that this bond is so stable (exist after curing at 700C in air)? Why are there so many of them? On the surface?

This is a commercially available boron-doped single-crystal silicon wafer (hole conduction, resistivity of 10-100 Ω cm, thickness about 700-800 microns).

Thus Si-O-B is more possible, BUT:

1) in literature Si-O-B is ~875, ~800 cm-1.

2) why this peak disappear after apply low-k SiO2 (SiOCH) film on it (by spin on).

It seems that SiO2 material somehow contributes to the transformation of this bond in Si-O (I suppose).

By the way I doubt with regard to “Si (TO+LO)” at 889 cm-1 because this peak is partially disappear after apply low-k SiO2 (SiOCH) film on it (by spin on) as well.

P.S.: I can not understand why in the first article does not have any peaks of Si-dopant bonds. On the other hand I can not find a lot differences in set of peaks in FTIR spectra of the boron-doped single-crystal silicon wafer and phosphorus-doped one.

I suppose Martin Herms is right. It is VO3 and VO2:

Article Dimers as Fast Diffusing Species for the Aggregation of Oxyg...

Thanks a lot!

Look the bonds Si2O3 in