There are many reports on defect related ferromagnetism in Oxide materials. Also its saturation moment is quite low and it varies a lot depending on the growth process. So is it possible to use it in the spintronic device applications in a controlled way?
You should read the literature of d0 magnetism very critically esecially the experimental ones claiming small magnetism. It has not been proved beyond doubt that these are real d0 magnetism and not due to impurity contamination. Also I advise you to be very cautious and careful before you spend a lot of time and energy in pursuing such endeavor.
The existence of d0 magnetism has not not been proved beyond doubt. So its application in spintronics is just a fantasy!
There is a qualitative explanation of the defect-induced ferromagnetism in oxides. I attach the schematic picture (from Coey). You should read the Coey's article: J. M. D. Coey, Solid State Sciences 7 (2005) 660–667.
There are theoretical studies on the so called d0 magnetism, but there are still controversies in the literature, ...we have proposed my colleagues and I, some explanations (see my papers model and ab initio based calculations), that the origin is the non magnetic impurity induced ferromagnetism requires two main ingredients: (i) appearance of localized states near the top of the valence band (or just below the conduction band) and electron-electron interaction to flat band. The physics is close to that of flat band ferromagnetism.. The model study predictions has been confirmed by ab initio calculations concerning for instance vacancies, Li, Na, K doped ZrO2 and TiO2.
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