I want to put a graphene oxide film on top of a BDD to make the thermal reduction of that GO film. Therefore, I need to know what is the maximal temperature BDD electrodes can withstand.
Boron-doped diamond (BDD) electrodes are known for their ability to withstand extreme potentials, corrosive and high temperature/pressure environments (Influence of temperature on the electrochemical...). However, I could not find a specific temperature value that BDD electrodes can withstand without losing their properties. It may be best to contact the manufacturer of your BDD electrodes for more information on their temperature limits.
I hope this helps!
Source:
(1) A practical guide to using boron doped diamond in electrochemical .... https://pubs.rsc.org/en/content/articlelanding/2015/cp/c4cp04022h.
(2) Maximum temperatures electronic components can withstand in low .... https://electronics.stackexchange.com/questions/99411/maximum-temperatures-electronic-components-can-withstand-in-low-pressure-molding.
(3) Influence of temperature on the electrochemical window of boron doped .... https://www.nature.com/articles/s41598-020-72910-x.
(4) Use of Boron‐Doped Diamond Electrodes in Electro‐Organic Synthesis .... https://chemistry-europe.onlinelibrary.wiley.com/doi/10.1002/celc.201801620.
The diamond itself can survive quite a lot, but if you have a metal-BDD Schottky contact in your system, e.g. Au/Pt/Ti/BDD, you shouldn't go significantly beyond 500°C or otherwise you will form a TiC interlayer and the contact turns Ohmic which means you no longer have a diode.
So, in your example, if you want to deposit GO at a higher temperature, but you need a Schottky contact elsewhere, you need to deposit the GO before you fabricate the Schottky contact.