07 November 2022 2 6K Report

Dear all

I have used UVO (UV-Ozone) treatment to create -OH end on SiO2 surface. It seems to work pretty well, but I can't find any articles explaining the exact mechanism. In my opinion, H2O vapor in the air might be the one supporting H atoms to form -OH ends. However, hydroxylation occurs anyway after quite a long gas purge with N2+O2 gas. My setup may not purge the air perfectly, but I'm still questioning the source of H atom during -OH end formation. If you know the mechanism of hydroxylation of SiO2 with UVO or have some articles about it, please let me know.

Thanks.

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