What is the electron mobility in bulk WSe2 crystals?

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Zheyong Fan

Article High Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

It seems that the above article only has data on hole mobility.

Sadegh Mehdi Aghaei

The electron and hole mobilities of bulk WSe2 are about 105 cm2 /(V s) and 236-500 cm2 /(V s) at room temperature, respectively.

Späh, R.; Elrod, U.; Lux-Steiner, M.; Bucher, E.; Wagner, S. P N Junctions in Tungsten Diselenide. Appl. Phys. Lett. 1983, 43, 79–81

Podzorov, V.; Gershenson, M. E.; Kloc, C.; Zeis, R.; Bucher, E. High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides. Appl. Phys. Lett. 2004, 84, 3301– 3303