1. The damage threshold of transparent dielectrics is determined by the presence of absorbing microdefects.
In their absence (ideal case) with sharp focusing can affect nonlinear mechanisms such as impact ionization and multiphoton absorption.
2. In intrinsic semiconductors photon energy is greater than the band gap, the determining factor is the linear absorption.
When the photon energy is less than the band gap, as in insulators, the main role is played by absorbing micro-defects and impurities.
In extrinsic semiconductors damage threshold is usually determined by absorbing impurities defects. However, with increasing temperature at high doping level, affect the blation threshold can free electrons.
In sufficiently pure metals damage threshold determined by the free electrons.
The magnetic field can affect the threshold of ablation through the ponderomotive pressure arising in the sample with a current placed in a magnetic field (as these stresses affect the mechanical subsystem). This effect should be particularly evident when sufficiently long laser pulses (10-3 - 10-6 s).
Taking into account the above, a magnetic field can influence the breakdown of metals and semiconductors, heavily doped at high temperatures while flowing in the current transport them.
In addition, the magnetic field can change the optical properties of liquid crystals and consequently also affect their ablation thresholds.
there are a lot of effect of magnetic field on laser ablation some of them on plasma generated some time heated plasma or confine it or on the interaction of laser source with plasma
what is the other condition of laser plasma interaction?
I think the when the external field introduced, it will increas the ablation depth due the heat transfer from plasma to the target as well as increasing the vapor pressure