This kind of information is usually not found in the literature, probably because it is not a simple issue and varies for different characteristics of the solar cells.

The so called light trapping scheme includes texturization and anti-reflexive coating, and there are different technologies for implementing  such a scheme.

The figure appended ( from the book “High Efficiency Silicon Solar Cells”, Martin Green, pg. 78) shows that different texturization schemes result in different increases on the Isc of the cell (compared to a polished cell), and shows also that the increase of the current for each scheme varies also with the thickness of the cell.

C-Si surface reflection coefficient without texturization is around 35% in the solar spectral range (0.35_1.2 µm), so this photons loss does not contribute to the photocurrent generation. When the surface is textured (Generally by chemical setup), we obtain an optical confinement which increment the absorption the incident photons in the C-Si bulk. This generates an increase of 35% of photocurrent and the absolute C-Si solar cell efficiency rises of about 1 to 2%. Because the surface of the wafer becomes greater with texturization, the surface recombination growth and the open circuit-voltage drop weakly, but these phenomenon do not compromise the benefic effect of the optical confinement of the silicon surface.

The idea behind the surface texturization is to introduce/enhance light trapping effect, which usually generates 1-2.5 % change in efficiency of a solar cell. This happens to due to increases optical path length meaning the light will bounce back and forth within the cell many times.