I am doing my research in thin films by using Physical vapour deposition method especially Sputtering system to prepare metal oxides and metal nitride thin films. So i want to know the difference between reactive and non reactive sputtering..
Sputtering is performed with a gas not allowing chemical reaction with the target material or substrate material. Typically noble gases.
Reactive Sputtering is performed including in the sputtering atmosphere at least a certain percentage of a gas which is able to chemically react with target and/or substrate mateirlas. Typically nitrogen, oxygen and hydrocarbons.
chemical reactions are activated and enabled by the action of the plasma.
metal oxides you can deposit (i) non reactively - in such case you need ceramic target of grown material (for example ZnO, Y2O3, etc..) and argon atmosphere in deposition chamber; (ii) reactively - in such case you need metallic target of grown material (Zn, Y,..), which is usually cheaper, and reactive atmosphere - usually mixture of oxygen and argon. Reactive deposition needs a bit deeper knowledge of hysteresis, stoichiometry, etc. in comparison with non-reactive deposition, where you achieve the grown film composition almost identical with the composition of the sputtering target.
Similarly in case of metal nitrides and mixture of argon and nitrogen.