PLD is the best method to deposite stoichiometric perovskite thin films. If one want to deposite on large area substrates, then r.f. sputtering is the best mehtod. But the oxygen stoichiometry may be little bit less when compared to PLD.
The researcher is not mentioning the name of the perovskite material that he want to deposit as thin film. Whether it contained oxygen, or any element which is in gaseous state at room temperature. What is the boiling point of the perovskite material. If the boiling point is about 1000 degree centigrade and does not contain oxygen, one can try e-beam. If the peroskite contains oxygen then one has to deposit the films in oxygen environment. So if the researcher finalized the material, and boiling temperature is known, then one can suggest the suitability of the e-beam method.
Firstly electron beam evaporation would not help, not a good choice.
Secondly sputtering, sol gel methods and maybe the costly and the most expensive PLD may help. But PLD also again is not a good choice, it is only good for epitaxial growth.
IN your question one thing is not clear, lwhich perovskite material is of interest to you, on which substrate, and what kind of a film do you desire (amorphous/polycrystalline/single crystal film/epitaxial films). Once your response to this question of mine becomes clear, then one can suggest the best way out, because always there are many different solutions.
Spin coating method is the best methods for deposition of perovskite thin films. However, PLD is sophoticate method for growing uniform, high quality stoichiometric nano/microstructured thin films. But this method is time consumed.
I Agree with K. Sreenivas. There are number of methods using which one can grow thin films. Each has its own advantages and disadvantages.
1. Which type of films do you want to grow? Epitaxial or Poly-crystalline ?
If Epitaxial growth is the only aim , one can select PLD, Sputtering, CVD or ALD.
2. E beam evaporation method can be used effectively for growing metallic films. It covers alloys too.
3. According to me, solution based techniques can not give high quality films suitable for device applications. It may be suitable for sensors and for those applications which depends on the surface properties. Though I have a doubt regarding the durability of the films.
Properties of the materials depends on various parameters and one of them is micro-structure. One can observe variation in the properties of the films grown by different techniques.
Sputtering techniques are usually used for large area deposition of thin films.This techniques is suitable for deposition of YBCO superconducting thin films.
One might consider depositing Perovskite thin films by co-evaporation method. This methods promise high quality, nice film coverage and freedom to control the thickness.
It depends upon your material, your target ( what type of film you want to grow) so I think you should better to give some clear details about your question so that someone could understand and share ones own experience.