In simple words, we can say all these different technologies based on the minimum gate length of the transistors which we use in these technologies...
For example, when we say 65nm technology, that means the transistor gate length in this technology is 65nm..and so on for corresponding technologies..
This is the general definition we follow..but the minimum length can be a bit small than the technology node value..say 60nm in 65nm technology node...
Hope this wil help you
Thank you for joining us Sir but i am a little bit confuse about that , it is somewhere related to lithography. 45 nm means smallest pattern that can be implemented on surface of integrated circuit is of 45 nm.
In advanced CMOS technologies, e.g. 32nm, 28 nm, etcetera, these numbers usually refer to 1/2 the contacted pitch of the DRAM, which is also 1/2 the pitch of the first level of metalization (the closest to the silicon substrate). It is close to the printed gate length of transistors, but not identical. Have a look at the International Technology Roadmap of Semiconductors (ITRS). For instance, this is the link to the Executive Summary:
http://www.itrs.net/Links/2011ITRS/2011Chapters/2011ExecSum.pdf
You'll find definitions in Fig. 1, and values in Tab. B.
to expand it just a tiny bit, aside from the gate width, when you talk about a technology node, such as 45 nm, you immediately allow the designers to compute certain things, like: the dynamic power consumption is CV^2f. Right there, "C" is the representative capacitance of that technology node. Also, the designer can look up the FO4 delay of that node to scale, say, a 45nm design down to a 65nm design by simply scaling the FO4 delays of the two nodes ...
Also, INTEL's tick-tock methodology works as tick (re-design) and tock (adapt a previous design to a lower node). The adaptation is done by using the metrics to re-calculate the new node's parameters by comparing the two nodes ...
In summary, when you mention a node, like, 45 nm, you are referring to a bunch of characteristic values (most of which are published in ITRS like Mario said) ...
Dear Mr. Gupta!!!
Hope you will find the answer of your question through the following link
http://www2.lbl.gov/Science-Articles/Archive/ALS-EUVL-sidebar.html
Please check this
http://www.edn.com/electronics-news/4317771/What-does-45-nm-mean-anyway-
After read all related above link, I am confused because nm means gate length of MOSFET or die size. Kindly resolve my confusion.
In relatively older nodes (e.g. 180 nm), a particular technology refers to the drawn channel length of the minimum sized transistor possible to fabricate in that process, which is equal to 2*lambda according to the design rules specified by MOSIS. For a detailed explanation of the design rules, please check the below documents:
http://www.dii.unisi.it/~malioto/eletec/materiale_didattico_pub/MOSIS_designrules.pdf
https://www.mosis.com/files/scmos/scmos.pdf
In current technologies, the numbers usually represent the minimum feature size (usually the DRAM Cell features are taken as reference as they have the highest density). The drawn channel length of the minimum sized FinFET is close, but not necessarily equal to double of the nm number as specified by the technology. Additionally, the same technology nodes from different fab labs do not usually behave the same (the correlation was higher in higher processes). However, they should satisfy the same set of characteristics given in the ITRS roadmap.
45 nm technology means the least length of the transistors in the whole process can be minimum of 45 nm..It can be more than that also .
Thank you all for this clarification.
I have a question regarding the C (capacitance) values of the different technologies.
From where I can get C values of the 20, 28, 45, 68,90 nm?
is there a datasheet for each nm technology?
Appreciate any help!
MOSFET is a key active device in an IC. Miniaturization of an IC is a consequence of miniaturization of MOSFET comprising of source drain and gate regions with respective metal contacts. Realization of gate oxide separating source and drain regions is the most critical pattern in an IC fabrication process. The length of gate oxide has direct relation to the effective channel length. The gate oxide thickness and its length attributes to dynamic behavior of a MOSFET. Reducing gate oxide thickness and its length improves MOSFET response.
It's mean that the minimum length of the transistor is 45nm for 45nm tech., 65nm for 65nm tech.. During the fabrication all second order effect are considered regarding the particular fabricated technology.
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