Theoretically the temperature dependence of the energy bandgap can be determined from the following equation:
Eg(T)=Eg(0)-[(aT^2)/(T+B)]
Where a (eV/K) and B (K) are fitting parameters. Eg(0), a and B are all unique to every single material including the doped systems, I think you can find a data base having those parameters from experimental physics journals.
Hope this helped...
Theoretically the temperature dependence of the energy bandgap can be determined from the following equation:
Eg(T)=Eg(0)-[(aT^2)/(T+B)]
Where a (eV/K) and B (K) are fitting parameters. Eg(0), a and B are all unique to every single material including the doped systems, I think you can find a data base having those parameters from experimental physics journals.
Hope this helped...
I know these stuff. This is of course Varshni equation however your answer triggered an idea in my mind. Thanks!!
Also the density of state (DOS) of semiconductor and possible interface barrier should not be forgotten
Temperature dependence of band gap is not same for various semiconductor materials. But you can by using a simulation code measure value of band gap at different temperatures. Then you can find a function for variation of band gap versus temperature.
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