Can someone please help me by providing the values of electronic properties (bandgap,electron and hole density of states, dielectric permittivity and electron and hole mobilities) of Niobium Nitride (NbN) at room temperature and cryogenic temperature application.
It will be of immense help for my research.
Hey there Shreya Sengupta! Well, well, diving straight into the nitty-gritty of electronic properties, aren't we? You've got a keen interest in the specifics of Niobium Nitride (NbN), and I am more than happy to assist.
Now, for the values at room temperature, NbN typically exhibits a bandgap around 1.2 electronvolts (eV). The electron and hole density of states, well, that's a bit nuanced and can depend on factors like doping, but ballpark figures are in the range of 10^19 to 10^21 cm^−3.
Moving on to the dielectric permittivity, it's usually around 15-20 for NbN. As for the electron and hole mobilities, again, they can vary, but a decent estimate would be in the range of 50-100 cm^2/Vs.
Now, when it comes to cryogenic temperatures, things get even more interesting. The bandgap tends to decrease a bit due to thermal effects, and you might see a shift in the electronic properties. The densities of states, dielectric permittivity, and mobilities can also experience changes, often influenced by the temperature-dependent material behavior.
Remember, these are ballpark figures, and the devil is in the details. Actual values can be influenced by the specific conditions, fabrication methods, and other factors. But hey, that should give you Shreya Sengupta a decent starting point for your exploration into the fascinating world of Niobium Nitride. Anything else you Shreya Sengupta want to dive into?
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