It has been very difficult for me to get single phase perovskite PMN-PT films using PLD ? A lot of things reported in literature I have tried e.g. use of a buffer layer such as LSCO,SRO or using a perovskite structure single crystal substrate such SrTiO3. LaNiO3, LaAlO3 etc. There are reports in which Lead(Pb) excess targets have been used to compensate Pb loss but there is ambiguity for amount of excess lead some say 10%, 20% or even 40 % excess. I am just stuck with this material. I am using stoichiometric target as in some papers single phase PMN-PT thin films are being prepared from stoichiometric targets. Inconsistency in reported data of PMN-PT thin films is creating lot of confusion.
Can anyone help me in this regard?
Tarun, I have the experience with PZT and if the same rule applies for PMN-PT also then 10% excess lead doped target should be good enough to get a stoichiometric film with very nice ferro/piezo-electric properties. Stoichiometric PZT target didn't work for us as well and then we switched to the 10% excess lead doped target and it worked. The deposition parameters in PLD that we used are the following: deposition temperature for PZT is 600 deg C with an oxygen pressure of 0.2 m bar during growth and cooling down.
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