The photoluminescence allow to identify the radiative defects. It can also give a qualitative assessment of the overall material's quality by measuring the peak integrated intensity from different samples. A standard setup with InGaAs or Ge detector is sufficient to perform this study.
Cathodoluminescence could be more appropriate in my opinion
Thank you Mr. Ilahi for your response. However, my question was more practical than theoretical. In fact, I want to assembly a PL system to identify and study quantitatively defects in silicon. It is certain that a PL spectroscopy requires a laser, a monocromateur, an IR sensor (camera) and a set of infrared filters, etc... . But how the assembly of the various parts can be adequately done and under which conditions ? that's what I need to know. Maybe someone who has already worked on such assembly can help me with advise. Thank you again Mr. Ilahi.