I have seen papers that have deposited them on different TEM grids, one of the main ones being Si. However, the temperature at which the SiC crystallizes seems to depend on many factors. Does anyone have experience with this that can offer some insight?

I tried depositing 100 nm of SiC on amorphous Si3N4 grids at 900C but this produced a thin layer of amorphous SiC.

My goal is to get 50 nm islands of or nanoparticles of 3C-SiC on my TEM grid if possible.

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