Specifically for devices using GaN-based materials, I am looking for opinions on the most accurate (i.e. consistent with experimental data) and user-friendly simulation packages for modelling the effects of high ambient temperatures, radiation exposure and operation over extended periods, in order to model the reliability of devices for use in applications such as the space industry or nuclear detection.
I doubt the software you specify do exist. Qualification of devices to such extend take decades. GaN tech is not mature yet.
Hi Oleg,
Thanks for your answer. Silvaco provide a Radiation Effects Module (http://www.silvaco.com/products/vwf/atlas/2D/rem/rem_br.html) that I think should work for GaN materials, and high temperatures and extended bias are supported too.
But as you say GaN is too immature to rely on the simulator alone without manually inputting most of the parameters. So I'll keep looking...
Silvaco Atlas has pre-defined models for GaN. For example GANSAT.N mobility model. You can try simulations with that. It gives you accurate results. I have tried simulations using this model.
Dear Matthew,
in these situations I think the better option is to develop your own physics-based model and computer simulation code. Depending on the device to be analyzed you could set a 1D model, so the work would be significantly simplified. There are several interesting books on device modeling and lot of publications focused on simulation of radiation effects. It takes some time, of course. I could give you some suggestions if you take this way.
Best, Ariel.
Suraj, yes I am familiar with Silvaco and have simulated GaN HEMTs there before. I am hoping the Radiation Effects Module will work just as well in GaN.
Ariel, that sounds like a good alternative approach. I'd be very interested in your suggestions, thank you!
- Badges
- Science topic