What are the best conditions for depositing the silicon nitrade (SiNx) layers at low temperature on the polymer substrate using PECVD system and using Precursor gases of silan (SiH4) and nitrogen (N2) without ammonia gas?
Dear Mohamed Abdelhamid, most published work are concentrating on temperature, which is Taken in the range 250-280°C, which in most cases harden and crack the polymeric substrate. The following documents links review and compare different approaches. My Regards
https://www.researchgate.net/publication/273219143_SiNx_barrier_layers_deposited_at_250C_on_a_clear_polymer_substrate
10.3390/mi10080552
https://doi.org/10.1063/1.3029704
https://www.nature.com/articles/s41598-018-22105-2?proof=true19
https://iopscience.iop.org/article/10.1149/2.0011710jss
DOI: 10.5772/64654
You can deposit SiNx on polymer substrate in 120-150 degree C using PECVD. You have to use SiH4, N2 and H2 (optional for better quality film). You can try with the recipe as follows, SiH4 - 5-10 sccm, N2 - 40-50 sccm and H2 - 40-50 sccm, pressure - 0.8-1 torr, power density - 50-60 mW/cm2, substrate temp. - 120 degree. But pre heat the sample for minimum 40 minutes before deposition in PECVD chamber as there will be chance of degassing from polymer substrate which has adverse effect on the quality of the film. Hope this will help you. You can email me for more discussion. My email id: [email protected]
Hi,
Temperature and frequency of application play a very important role in plasma homogeneity and film quality. Plasma is more homogeneous at 200 °C and with a higher application frequency. However, the residence time has no effect on film quality or plasma homogeneity. A very homogeneous film can be obtained with a silane/nitrogen ratio of 1:1.
With my best regards
Martinu, Ludvik, and Daniel Poitras. "Plasma deposition of optical films and coatings: A review." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18, no. 6 (2000): 2619-2645.
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