Beside Hall method, Please suggest me some other methods for N-Type or P-Type Semiconductor determination.
Muhammad I think you are added in my facebook friend list as well, so can you elaborate further these techniques?
Determination of the conductivity type based on the Seebeck effect is limited by a material resistance (not more than 10E5 Ohm). Some conclusions about conductivity type can be made by analyzing the shape of the current-voltage curves which were measured using metallic contacts with different work functions on the same semiconductor material.
Dear Dr. Artur Braun your Answer seems the most interesting, can you elaborate further. I do have EIS spectra.
(1) Hall measurements: Thereby you can define carrier type, carrier consantration, sheet resistivity and mobility of the majority cariers. It's an easy and rapid way.
(2) Anomalous Hall Effekt: Therefor you need eventually high magnetic fields up to several Tesla.
Literature:
(1) L. J. van der Pauw, Philips Res. Repts. 13, 1 (1958).
(2) L. Berger and G. Bergmann, in The Hall Effect and Its Applications, edited by C. L. Chien and C. R. Westgate, Plenum Press, NY 1979, p. 55-61.
I think that ( Thermo electric power is the Best ) and then you should make a confirmation by the Hall effect measurements .
Good Luck!
For a crystalline semiconductor or most metals as Mostafa Marzok, eg. a thermo electric power technique is the faster (not the best ) one. To be more sure, you should make a confirmation by Hall effect measurement . For non single crystal semiconductors as Artur Braun.
Hi, Ibrahim
Please go for Hot-probe method. It is very fast. Even you can do it with a multimeter. Heat one (red) probe of a multimeter and leave the black probe as it is. Place both the probe on the wafer or semiconductor. If the voltage shows +ve it's n-type and if it is -ve then it is p-type. Please go to the links and tutorial video.
http://ecee.colorado.edu/~bart/book/hotprobe.htm
https://www.youtube.com/watch?v=gXWzHtfuR1Y
Dr. Avishek Das, So nice of you... It is really really helpful sharing.
Dear Ibrahim,
I think, almost all has been already said , but just to avoid some possible misunderstanding, I will add few comments :
1. Mott-Schottky "analysis". Here, the essential requirement is that you have Schottky-Ohmic contacts. Then you are looking effectively "only" at one contact , namely the rectifying Schottky contact that can be affected by the applied dc voltage bias. Depending on the direction of the field (polarity of the applied dc voltage bias), the majority carriers will be "pushed away" or "attracted towards" the Schottky electrode, thereby decreasing/increasing the depletion capacitance and increasing/decreasing the depletion resistance. You do not need any "Mott-Schottky" analysis to determine the type then. Example: My Schottky electrode is positive, the Ohmic electrode is negative and the sample resistance is increasing. Then the holes are the majority carriers in my system.
However, for Schottky-Schottky samples, the "Mott-Schottky analysis" will not give you the type of the majority carriers, only their concentration.
2. Time of Flight. This is historically the standard method , but requires also well defined, good contacts.
3. Hall effect. Also standard, but useless for systems where the mobile charge carriers move via localised states - hopping transport.
4. Thermopower-Seebeck coefficient (X.Granados-Garcia). I agree, easy and relatively cheap. Together with conductivity measurements will give even information on the various aspects of transport. This would be also my choise.
5. There is a really cheap and fast variation of the Thermopower method, sometimes used. You put a hot wire at one point on the sample and cold wire at other point and measure the polarity.
I hope this will also help you
With best regards
Petr
Ibrahim Khan, your question might be more accurate, if it was about : techniques to determine the "apparent" (N or P Type) character of (semiconducting) materials.
Petr Viscor : which one of the (above) techniques you propose for a (polycrystalline) material like a (pressed) powder material, films, polycrystalline Si, etc. ?
Dear Ibrahim and Ioannis,
it is my feeling that anything more complicated than a single crystal, would require thermo-power measurement. The set-up is "simple" and can be also used for dc conductivity(perhaps even EIS) measurements. It will work for films (deposited on insulating substrates - glass, saphire), on poly-crystalline Silicon. Sintered (powder)materials will be a challenge, because of the unclear role of inter-grain areas. But even there I would use thermo-power. Also, it is always useful to have more than one transport coefficient when doing some basic research into "un-known" material.
With greetings
Petr
Thank you dear Dr. Viscor and Samaras for your most valuable comments.
Dear Ibrahim, Hall effect measurement is the best and easy tool to measure type of semiconductor as well mobilty .
Yes! Dear Hitesh, I mentioned it in the Question, I was keen to know other related techniques, which were fully explained by our great research fellows from different disciplines.
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