Dear colleagues,
The effect of post-deposition annealing modes and mechanism of recrystallization on the structural and electrical properties of the deposited nano-grained thin film materials by PVD should be studied in order to find the optimal conditions (combination of the particle/grain size of the initial material and the annealing temperature and time) in my work.
Optimization of the properties of these films is typically carried out by the empirical selection of deposition modes and in some cases by the subsequent heat treatment.
I kindly request you to tell me if there is any other way of finding optimal conditions? What specific optimal values of particle/grain size of the initial material and the annealing temperature and time should be applied?
Best regards and thank you in advance,
Konstantin.
Dear Abbas Razavykia,
Thank you for your reply.
The MIIM architecture not only allows insulators dominated by emission based conduction to be used in temperature insensitive diodes, but actually takes advantage of defect conduction to improve asymmetry through “defect enhanced direct tunneling (DEDT)’’. Optimization of the bilayer stack and the relative thicknesses of the insulator layers will enable further improvements in performance. Hence, it is found that diode performance is enhanced by a mechanism termed DEDT. However, on the other hand, the defect sites are regions where leakage currents can pass between the electrodes and can therefore have detrimental effects on the I-V characteristics of the device. Therefore, the trade-off should be implemented in this case in order to obtain an adequate value of the diode performance.
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