Dear All,
I have ca. 500 nm parylene C on top of the Au electrode. However, due to undercuts of the metal electrodes, a thin layer of ca. 100 nm parylene is also deposited underneath ( at the edges) of the metal electrodes. Commonly, Parylene C is oxygen plasma etched. This is a directional etch, thus the hidden parylene below the electrodes ( at the edges) can not be etched. Therefore, I need to do a short wet etching of parylene (type C) to remove it completely.
Does anyone have experience with the wet etching of parylene ? Masking layer is Al or even Cr can be used in my case.
Thanks for your help and best regards
Hien D Tong
Maybe using H2O2 bath (about 80-90C).
However, plasma etch is the best solution. Directional etching depends on the pressure and chamber geometry. Increasing the pressure (0.8 Torr), would favor the chemical etch.
If you are not worry about H2, you can used H2 plasma etch. It avoids the oxidation of metal electrodes.
Indeed higher pressures in plasma etching should make the plasma less directional and the etching more chemical instead of physical.
Piranha solution, one of the most agressive wet etchants for organic materials, also attacks parylene, but still I am not sure if it will be good enough for complete removal.
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