I am interested and entering into the topic of "an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping". While the band structure of unstrained Ge exhibits indirect conduction band valleys (L) lower than the direct valley (Γ) by 136 meV, the tensile strain decreases the difference between the L valleys and the Γ valley, which is an important step towards direct band-gap of Ge.
Now I am interested in different approaches for introducing tensile. Here I want to know the following aspects: 1. Where can I find the quantitative stress-strain curves for Ge and Si? 2. How to measure stress and strain of bulk material or thin films? 3. Do you have some approach for introducing tensile to a thin film?
Any discussion is welcome. Thank you very much for your time and help!
Dear Dr. Stephan Schoenfelder, thank you very much for your answer!
I am sorry for my lack knowledge of Mechanics of Materials. Based on your description, I have 2 more questions:
1. Is there a turning point of relationship between stress and strain, from linear to non-linear?
2. Generally, how is the trend for the ratios of stress to strain, from bulk material to thin films, nanocrystals?
Could you please suggest me some fundamental books on Mechanics of Materials? Many Thanks!
Min
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