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The attached figure shows the energy diagram of the MOS system for n-Ge in accumulation. Positive bias on the gate attracts electrons to the Ge surface. The surface charge will consist of an...
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Especially in between 500-650 degrees centigrade. Thanks a lot!
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I am a researcher in Silicon Photonics (also known as CMOS photonics). Sometimes I was in trouble because I do not have real experience of CMOS-compatible process, and I will doubt if the designed...
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I am interested and entering into the topic of "an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping". While the band structure of unstrained Ge exhibits indirect conduction band...
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I am interested and entering into the topic of "an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping". I read some nice papers but I didn't understand the point that "low loss...
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